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Thin-film lithium niobate intensity modulator （Integrate Light Source)
Product description
Thin film lithium niobate intensity modulator (integrated light source) is a high-performance and highly integrated electro-optic conversion device, which is independently developed by our company and has complete independent intellectual property rights. The product integrates a low-noise DFB laser and a high-stability thin-film lithium niobate modulator chip, and is packaged by high-precision coupling technology to achieve ultra-high electro-optical conversion efficiency. Compare with that traditional lithium niobate crystal modulator, the product has the characteristics of low half-wave voltage, high stability, small device size and thermal-optical bias control, and can be widely apply to the fields of digital optical communication, microwave photonics, backbone communication networks, communication scientific research projects and the like.
Product features
Integrated low RIN laser sources
RF bandwidth up to 40 GHz
Half-wave voltage down to 2.5 V
The output optical power of the modulator is up to 14.5 dBm.
High integration, small device size
Technical parameters
|
Category |
Parameter |
Symbol |
Unit |
Indicators |
|
Optical properties |
Operating wavelength (@TEC 25 °C, LD 350 mA) |
λ |
nm |
1550 ± 2 |
|
Optical Extinction Ratio (@ DC) (*) |
ER |
dB |
≥ 20 |
|
|
Optical return loss |
ORL |
dB |
≤ -27 |
|
|
Modulator full-open output optical power (@TEC 25 °C, LD 350 mA) （**） |
Pout |
dBm |
Maximum: 14.5 Minimum: 12.5 |
|
|
Relative intensity noise (@ 2 GHz, TEC 25 °C, LD 250 mA) |
RINLD |
dBc/Hz |
Maximum: -158 Typical value: -160 |
|
|
Electrical properties |
3 dB electro-optic bandwidth (From 2 GHz) |
S21 |
GHz |
Minimum: 36 Typical value: 40 |
|
RF half-wave voltage (@ 50 kHz) |
Vπ |
V |
Maximum: 3.5 Minimum: 2.5 |
|
|
Thermally adjusted offset half-wave power |
Pπ |
mw |
≤ 50 |
|
|
Recommended TEC Set Temperature Range |
TTEC |
°C |
10~40 |
|
|
Thermistor resistance (@ room temperature) |
Rth |
Ohm |
10 K±1.0% |
|
|
RF return loss (2 to 40 GHz) |
S11 |
dB |
≤ -10 |
|
|
Working conditions |
Operating Temperature (@ TEC 40 ° C) |
TO |
°C |
-40~70 |
|
All Temperature Insertion Loss Difference (@ TEC 40 ° C) |
TDL |
dB |
≤ 1 |
* High extinction ratio (> 25 dB) is customizable.
* * Higher output power can be customized
Damage threshold
If the device works beyond the maximum damage threshold, it will cause irreversible damage to the device, and such device damage is not within the scope of maintenance service.
|
Parameter |
Symbol |
Minimum value |
Maximum value |
Unit |
|
RF input power |
Sin |
- |
18 |
dBm |
|
RF Input Swing Voltage |
Vpp |
-2.5 |
+2.5 |
V |
|
RF Input RMS Voltage |
Vrms |
- |
1.78 |
V |
|
Laser current |
ILD |
- |
400 |
mA |
|
TEC current |
ITEC |
- |
1.5 |
A |
|
Hot-tuned bias voltage |
Uheater |
- |
4.5 |
V |
|
Thermal adjustment of bias current |
Iheater |
- |
50 |
mA |
|
Storage temperature |
TS |
-40 |
85 |
℃ |
|
Relative humidity (no condensation) |
RH |
5 |
90 |
% |
Package dimensions and pin definitions (mm)
|
Pin |
Symbol |
Description |
|
1 |
TEC+ |
TEC positive pole |
|
2 |
TEC- |
TEC negative electrode |
|
3 |
LD+ |
Laser anode |
|
4 |
LD- |
Laser cathode |
|
5 |
MPD2+ |
Laser backlight monitoring PD anode |
|
6 |
MPD2- |
Laser backlight monitoring PD cathodic |
|
7 |
Rth |
Thermistor electrode |
|
8 |
Rth |
Thermistor electrode |
|
9 |
MPD1- |
Modulator outgoing light monitoring PD cathodic |
|
10 |
MPD0- |
Modulator incident light monitoring PD cathodic |
|
11 |
MPD1 & MPD0 + |
Common anode of light monitor PD in and out of modulator |
|
12 |
Heater |
Thermally adjusted bias electrode |
|
13 |
Heater |
Thermally adjusted bias electrode |
|
14 |
- |
No definition |
|
RF |
RF connector (*) |
2.92 mm K connector |
|
Out |
Light emitting fiber (* *) |
FC/APC, SMF (optical fiber loose tube length about 1m) |
* Customizable 1.85 mm connector or J connector.
* * Polarization-maintaining fiber can be customized.
If you need more information, Please contact us .
