Thin film lithium niobate phase modulator

Thin-film lithium niobate (TFLN) phase modulators are optical modulators based on lithium niobate (LiNbO₃) materials that utilise the electro-optic effect to achieve fast and efficient modulation of the phase of light waves. Compared with conventional bulk material LiNbO₃ modulators, TFLN has significantly improved performance through nanoscale thin-film processes, making it a key technology for high-speed optical communications, quantum optics and integrated photonics.

contact us:lina@glhcoptical.com

 

Product description 

 

Thin film lithium niobate phase modulator is a high-performance electro-optic conversion device, which is independently developed by our company and has complete independent intellectual property rights. The product is packaged by high-precision coupling process technology to achieve ultra-high electro-optical conversion efficiency. Compare with that traditional lithium niobate modulator, the product has the characteristics of low half-wave voltage, high stability and small device size, and can be widely apply to the fields of digital optical communication, microwave photonics, backbone communication networks, communication scientific research projects and the like.

 

 

Product features

 

RF bandwidth up to 40 GHz

Half-wave voltage down to 3 V

Insertion loss as low as 4.5 dB

Small device size

 

 

Technical parameters

 

Category

Parameter

Symbol

Unit

Indicators

Optical Performance

 (@ 25 ° C)

Operating Wavelength (*)

λ

nm

~1550

Optical return loss

ORL

dB

≤ -27

Optical insertion loss (*)

IL

dB

Maximum: 5.5

Typical value: 4.5

Electrical properties

(@25°C)

3 dB electro-optic bandwidth (From 2 GHz)

S21

GHz

X1: 2

X1: 4

Minimum: 18

Typical value: 20

Minimum: 36

Typical value: 40

RF half-wave voltage

(@ 50 kHz)

Vπ

V

Maximum: 3.5

Typical value: 3.0

RF return loss

(2 to 40 GHz)

S11

dB

≤ -10

Working conditions

Operating temperature

TO

°C

-20~70

* Customizable.

 

 

Damage threshold

 

If the device works beyond the maximum damage threshold, it will cause irreversible damage to the device, and such device damage is not within the scope of maintenance service.

 

Parameter

Symbol

Optional

Minimum value

Maximum value

Unit

RF input power

Sin

X2: 4

-

18

dBm

X2: 5

-

29

RF Input Swing Voltage

Vpp

X2: 4

-2.5

+2.5

V

X2: 5

-8.9

+8.9

RF Input RMS Voltage

Vrms

X2: 4

-

1.78

V

X2: 5

-

6.30

Optical input power

Pin

-

-

20

dBm

Storage temperature

Ts

-

-40

85

Relative humidity (no condensation)

RH

-

5

90

%

 

 

 

Package dimensions and pin definitions (mm)

 

 

 

 

 

 

 

 

Note: Data marked with REF. Are reference values only.

 

Pin

Symbol

Description

1

-

No definition

2

-

No definition

3

-

No definition

4

-

No definition

5

-

No definition

6

-

No definition

7

-

No definition

RF

RF Connector (*)

2.92 mm K connector

In

Incoming optical fiber

FC/APC, PMF

Out

Light-emitting fiber

FC/APC, PMF

 * Customizable 1.85 mm connector or J connector.

 

 

 

 

 

S21 Test Sample (40 GHz Typical)

 

 

 

 

 

 

 

 

Ordering information

 

HC- LB-X1C6PPBP6X2

Optional

Description

Option number

X1

3 dB electro-optic bandwidth

2 : 20G

4: 40G

X2

Maximum RF input power

4 or 5

Product description: 20 GHz/40 GHz thin-film lithium niobate phase modulator.

 

 

 

If you need more information , Please contact us .